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| (R) BUL128FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 1 2 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 700 400 9 4 8 2 4 31 -65 to 150 150 Unit V V V A A A A W o o C C September 2001 1/7 BUL128FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 4.1 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = -1.5 V) Emitter-Base Voltage (I C = 0) Test Conditions V CE = 700 V V CE = 700 V I E = 10 mA I C = 100 mA L = 25 mH T j = 125 o C 9 400 Min. Typ. Max. 100 500 Unit A A V V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) Collector Cut-Off Current (I B = 0) Collector-Emitter Saturation Voltage V CE = 400 V IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A 250 0.7 1 1.5 0.5 1.1 1.2 1.3 10 15 14 1.9 0.2 0.6 0.1 45 40 2.9 0.4 1 0.2 A V V V V V V V V BE(sat) Base-Emitter Saturation Voltage DC Current Gain I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 mA IC = 1 A IC = 2 A V CC = 125 V I B1 = 0.4 A T p = 30 s IC = 2 A V BE(off) = -5 V V clamp = 200 V I B = 0.1 A I B = 0.2 A I B = 0.5 A V CE = 5 V V CE = 5 V V CE = 5 V IC = 2 A I B2 = -0.4 A (see fig.2) I B1 = 0.4 A R BB = 0 (see fig.1) h FE ts tf ts tf RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time s s s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 BUL128FP Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL128FP Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BUL128FP Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL128FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 6/7 G BUL128FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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